Joshua Taillon
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Characterization of the Oxide-Semiconductor Interface in NO, P, and N-Plasma Passivated 4H-SiC/SiO$_\sf{2}$ Structures Using TEM
Project
Slides
Date
Jun 26, 2013
Event
55
th
Electronic Materials Conference
Location
South Bend, IN
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Characterization of the oxide-semiconductor transition layer in NO, P, and N-plasma passivated 4H-SiC/SiO$_\sf{2}$ structures using transmission electron microscopy
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Characterization of the Oxide-Semiconductor Interface in NO, P, and N-plasma Passivated 4H-SiC/SiO$_\sf{2}$ Structures Using TEM
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