Characterization of the Oxide-Semiconductor Interface in NO, P, and N-plasma Passivated 4H-SiC/SiO$_\sf{2}$ Structures Using TEM and XPS

Name: Characterization of the Oxide-Semiconductor Interface in NO, P, and N-plasma Passivated 4H-SiC/SiO$_\sf{2}$ Structures Using TEM and XPS
Start: 2013-12-04T00:00:00Z
Location: Boston, MA