Joshua Taillon
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Characterization of the Oxide-Semiconductor Interface in NO, P, and N-plasma Passivated 4H-SiC/SiO$_\sf{2}$ Structures Using TEM
Project
Slides
Date
Aug 22, 2013
Event
8
th
Annual SiC MOS Workshop
Location
College Park, MD
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Characterization of the Oxide-Semiconductor Interface in NO, P, and N-Plasma Passivated 4H-SiC/SiO$_\sf{2}$ Structures Using TEM
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Characterization of the Oxide-Semiconductor Interface in NO, P, and N-plasma Passivated 4H-SiC/SiO$_\sf{2}$ Structures Using TEM and XPS
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