Characterization of the Oxide-Semiconductor Interface in NO, P, and N-plasma Passivated 4H-SiC/SiO $_{2}$ Structures Using TEM

Name: Characterization of the Oxide-Semiconductor Interface in NO, P, and N-plasma Passivated 4H-SiC/SiO$_\sf{2}$ Structures Using TEM
Start: 2013-08-22T00:00:00Z
Location: College Park, MD

Project Slides

Date

Aug 22, 2013

Event

8^th Annual SiC MOS Workshop

Location

College Park, MD

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Characterization of the Oxide-Semiconductor Interface in NO, P, and N-plasma Passivated 4H-SiC/SiO2 Structures Using TEM

Characterization of the Oxide-Semiconductor Interface in NO, P, and N-plasma Passivated 4H-SiC/SiO $_{2}$ Structures Using TEM