Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO$_\sf{2}$ Structures Using TEM and XPS

Name: Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO$_\sf{2}$ Structures Using TEM and XPS
Start: 2014-08-14T00:00:00Z
Location: College Park, MD

Project Slides

Date

Aug 14, 2014

Event

9^th Annual SiC MOS Workshop

Location

College Park, MD

Joshua Taillon

Materials Data Scientist

A materials research scientist at NIST interested in scientific data curation, AI for materials research, and baking bread.