Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO$_\sf{2}$ Structures Using TEM and XPS

Name: Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO$_\sf{2}$ Structures Using TEM and XPS
Start: 2015-08-05T00:00:00Z
Location: Portland, OR

Project PDF Slides

Date

Aug 5, 2015

Event

2015 Microscopy and Microanalysis Meeting

Location

Portland, OR

Joshua Taillon

Materials Data Scientist

A materials research scientist at NIST interested in scientific data curation, AI for materials research, and baking bread.