Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO$_\sf{2}$ MOS Structures Using TEM and XPS

Name: Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO$_\sf{2}$ MOS Structures Using TEM and XPS
Start: 2015-08-13T00:00:00Z
Location: College Park, MD

Project Slides

Date

Aug 13, 2015

Event

10^th Annual SiC MOS Program Review

Location

College Park, MD

Joshua Taillon

Materials Data Scientist

A materials research scientist at NIST interested in scientific data curation, AI for materials research, and baking bread.