Analytical Electron Microscopy of Interfacial States in 4H-SiC/SiO$_\sf{2}$ MOS Devices

Name: Analytical Electron Microscopy of Interfacial States in 4H-SiC/SiO$_\sf{2}$ MOS Devices
Start: 2016-11-30T00:00:00Z
Location: Boston, MA

Project Slides

Date

Nov 30, 2016

Event

2016 Fall Materials Research Society Meeting

Location

Boston, MA

Joshua Taillon

Materials Data Scientist

A materials research scientist at NIST interested in scientific data curation, AI for materials research, and baking bread.